NTMD6601NR2G ON Semiconductor, NTMD6601NR2G Datasheet - Page 6

• Manufacturer Part Number: NTMD6601NR2G
• Description: MOSFET N-CH 80V 1.1A 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6601NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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-Z-
-Y-
B
H
-X-
8
1
0.25 (0.010)
G
A
D
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
5
4
M
Z
S
Y
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
S
C
0.25 (0.010)
X
SEATING
PLANE
S
0.024
0.10 (0.004)
0.6
0.275
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: [phone]
M
7.0
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
Y
NTMD6601NR2G
http://onsemi.com
M
N
CASE 751-07
X 45
ISSUE AJ
SO-8 NB
_
M
6
K
SCALE 6:1
0.060
0.155
1.52
4.0
1.270
0.050
J
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
5. DIMENSION D DOES NOT INCLUDE DAMBAR
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STYLE 11:
ANSI Y14.5M, 1982.
MOLD PROTRUSION.
PER SIDE.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
STANDARD IS 751-07.
PIN 1. SOURCE 1
DIM
G
M
A
B
C
D
H
K
N
S
J
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
MILLIMETERS
MIN
4.80
3.80
1.35
0.33
0.10
0.19
0.40
0.25
5.80
0
1.27 BSC
_
MAX
5.00
4.00
1.75
0.51
0.25
0.25
1.27
0.50
6.20
8
_
0.189
0.150
0.053
0.013
0.004
0.007
0.016
0.010
0.228
MIN
0.050 BSC
0
NTMD6601N/D
INCHES
_
0.197
0.157
0.069
0.020
0.010
0.010
0.050
0.020
0.244
MAX
8
_