NTMD6601NR2G ON Semiconductor, NTMD6601NR2G Datasheet - Page 4

• Manufacturer Part Number: NTMD6601NR2G
• Description: MOSFET N-CH 80V 1.1A 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6601NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
600
500
400
300
200
100
100
0.1
10
10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
0
1
1
-10
1
0.1
C
C
V
SINGLE PULSE
T
V
I
V
Figure 11. Maximum Rated Forward Biased
rss
iss
D
C
GS
DD
GS
V
= 2.2 A
= 25°C
-5
DS
td(off)
= 15 V
= 64 V
= 5.0 V
t
Figure 9. Resistive Switching Time
d(on)
Variation versus Gate Resistance
V
V
= 0 V
Figure 7. Capacitance Variation
DS
GS
t
t
r
f
, DRAIN-TO-SOURCE VOLTAGE (V)
R
G
0
Safe Operating Area
, GATE RESISTANCE (W)
V
C
GS
V
1
R
THERMAL LIMIT
PACKAGE LIMIT
rss
DS
DS(on)
= 0 V
5
LIMIT
10
dc
10
TYPICAL ELECTRICAL CHARACTERISTICS
10
15
10 ms
T
1 ms
J
100 ms
= 25°C
C
20
NTMD6601NR2G
oss
http://onsemi.com
C
iss
100
100
25
4
2.5
1.5
0.5
10
25
20
15
10
8
6
4
2
0
2
1
0
5
0
Figure 10. Diode Forward Voltage versus Current
Figure 8. Gate-To-Source and Drain-To-Source
0
0
25
Figure 12. Maximum Avalanche Energy versus
Q1
V
T
GS
J
T
1
J
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
V
= 0 V
50
SD
0.2
Starting Junction Temperature
Voltage versus Total Charge
Q
, SOURCE-TO-DRAIN VOLTAGE (V)
2
Q2
G
, TOTAL GATE CHARGE (nC)
75
3
0.4
4
QT
100
5
0.6
125
6
I
0.8
D
7
I
T
D
= 7.0 A
150
J
= 1.0 A
= 25°C
8
175
9
1