FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 139
FDR8508P
Manufacturer Part Number
FDR8508P
Description
MOSFET P-CH 30V 3A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8508P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
750pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8508P
Manufacturer:
FSC
Quantity:
20 000
- Current page: 139 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Schottky Diodes and Rectifiers
1N5820
1N5821
1N5822
SB3100
SB330
SB340
SB350
SB360
SB380
SB5100
SB520
SB530
SB540
SB550
SB560
SB580
1N5817
1N5818
1N5819
SB1100
SB120
SB130
SB140
SB150
SB160
SB180
FMKA130L
FMKA140
S100
SS12
SS13
SS14
DO-201AD
DO-41
SMA
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Function
–
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
I
150
150
150
150
150
150
150
(A)
FSM
80
80
80
80
80
80
80
80
80
25
25
25
30
30
30
30
30
30
30
30
30
40
40
40
40
2-134
(°C/W)
R
28
28
28
40
40
40
40
40
40
25
25
25
25
25
25
25
80
80
80
80
80
80
80
80
80
80
88
88
88
88
θJA
–
–
Discrete Power Products –
V
100
100
100
100
RRM
(V)
20
30
40
30
40
50
60
80
20
30
40
50
60
80
20
30
40
20
30
40
50
60
80
30
40
20
30
40
I
F (AV)
(A)
3
3
3
3
3
3
3
3
3
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
Diodes and Rectifiers
FM
0.475
0.525
0.85
0.74
0.74
0.85
0.55
0.55
0.55
0.67
0.67
0.85
0.45
0.55
0.85
0.85
0.41
0.85
(V)
0.5
0.5
0.5
0.7
0.5
0.5
0.5
0.6
0.5
0.5
0.7
0.6
0.5
0.5
Max
(µA) @V
1000
1000
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
200
200
200
200
I
RM
Max
100
100
100
100
20
30
40
30
40
50
60
80
20
30
40
50
60
80
20
30
40
20
30
40
50
60
80
30
40
20
30
40
R
(V)
Related parts for FDR8508P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: