FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR8508P
Manufacturer Part Number
FDR8508P
Description
MOSFET P-CH 30V 3A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8508P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
750pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8508P
Manufacturer:
FSC
Quantity:
20 000
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BGA
1.5x1.5 mm
FDZ298N
2.0x2.0 mm
FDZ203N
2.0x2.5 mm
FDZ201N
FDZ209N
2.5x4.0 mm
FDZ2553N
FDZ2553NZ
FDZ2551N
3.5x4.0 mm
FDZ7064N
FDZ7064S
5.0x5.5 mm
FDZ5047N
1.5x1.5 mm
FDZ299P
2.0x2.0 mm
FDZ204P
2.0x2.5 mm
FDZ202P
2.5x4.0 mm
FDZ2554P
FFDZ2554PZ
FDZ2552P
3.5x4.0 mm
FDZ208P
FDZ206P
BGA N-Channel
BGA P-Channel
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-30
-20
20
20
20
60
20
20
20
30
30
30
DSS
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Monolithic Common
Config.
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Drain
Drain
Drain
Drain
Drain
Drain
0.0029
0.0105
0.007
0.007
10V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.08@5V
0.0045
0.0165
0.0095
0.027
0.018
0.018
0.014
0.014
0.018
0.008
0.009
0.055
0.045
0.045
0.028
0.028
0.045
4.5V
Max (Ω) @ V
2-3
0.0145
2.5V
0.039
0.075
0.075
0.045
0.045
0.075
0.03
0.03
0.02
0.02
0.03
0.08
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.6
11
11
12
13
11
31
25
52
14
15
25
38
7
9
9
9
= 5V
I
D
13.5
13.5
12.5
7.5
9.6
9.6
4.6
4.5
5.5
6.5
6.5
5.5
22
13
6
9
4
9
(A)
MOSFETs
P
D
1.7
1.6
2.1
2.1
2.1
2.2
2.2
2.8
1.7
1.8
2.1
2.1
2.1
2.2
2.2
2
2
2
(W)
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