FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 90
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR8508P
Manufacturer Part Number
FDR8508P
Description
MOSFET P-CH 30V 3A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8508P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
750pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR8508P
Manufacturer:
FSC
Quantity:
20 000
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Bipolar Power Transistors – General Purpose Transistors (Continued)
TIP31B
BD241C
TIP31C
KSC2233
KSD526
KSD73
KSD362
TIP41
BD243
TIP41A
BD243A
TIP41B
BD243B
TIP41C
BD243C
KSD363
KSD568
KSD569
KSC2334
BU407
BU407H
BU406
BU408
BD533
BD535
BD537
KSE3055T
MJE3055T
KSE44H
TO-220 PNP Configuration
TIP30A
TIP30C
KSA940
BD240
BD240A
Products
I
C
1.5
10
10
10
3
3
3
4
4
5
5
6
6
6
6
6
6
6
6
6
7
7
7
7
7
7
7
8
8
8
1
1
2
2
(A) V
CEO
100
100
100
100
120
100
150
150
200
200
100
150
80
60
80
60
70
40
45
60
60
80
80
60
80
45
60
80
60
60
80
60
45
60
(V) V
CBO
115
100
200
100
150
100
100
300
100
100
150
330
330
400
400
100
150
80
80
40
45
60
60
80
80
45
60
80
70
70
60
55
70
–
(V) V
EBO
5
5
5
5
5
5
8
5
5
5
5
5
5
5
5
8
7
7
7
6
6
6
6
5
5
5
5
5
5
5
5
5
5
5
(V) P
C
40
40
40
40
30
30
40
65
65
65
65
65
65
65
65
40
40
40
40
60
60
60
60
50
50
50
75
75
50
30
30
25
30
30
(W)
Min
10
10
10
30
40
70
20
15
30
15
30
15
30
15
30
40
40
40
40
20
20
15
20
20
60
15
15
40
15
15
–
–
–
–
2-85
Discrete Power Products –
Max
150
240
240
140
240
200
200
240
100
100
140
50
50
75
75
75
75
75
75
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
@I
FE
0.01
0.01
0.01
0.5
0.3
0.3
0.3
0.3
0.5
C
–
–
–
–
3
3
3
1
1
5
3
3
3
3
1
3
3
3
4
4
2
1
1
1
1
(A) @V
10
10
CE
–
–
–
–
4
4
4
5
5
5
4
4
4
4
4
4
4
4
5
1
1
5
5
5
5
4
4
1
4
4
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.45
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.2
1.2
1.5
1.5
1.5
1.5
1.5
0.5
0.6
0.8
1.1
0.7
1.5
0.7
0.7
1.2
1.5
1.5
1.5
1.5
0.5
0.8
0.8
1.1
0.7
1
2
1
1
1
1
1
1
1
V
CE (sat)
0.5
C
3
3
3
4
3
5
5
6
6
6
6
6
6
6
6
1
5
5
5
5
5
5
6
2
2
2
4
4
8
1
1
1
1
(A) @I
0.375
0.375
0.125
0.125
0.05
0.6
0.4
0.3
0.5
0.5
0.6
0.6
0.6
0.6
0.1
0.5
0.5
0.5
0.5
0.8
0.5
1.2
0.2
0.2
0.2
0.4
0.4
0.4
0.2
0.2
B
1
1
1
1
(A)
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