IRF7379 International Rectifier, IRF7379 Datasheet

MOSFET N+P 30V 4.3A 8-SOIC

IRF7379

Manufacturer Part Number
IRF7379
Description
MOSFET N+P 30V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7379

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A, 4.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7379

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Part Number
Manufacturer
Quantity
Price
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IRF7379
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IR
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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
I
Thermal Resistance Ratings
Absolute Maximum Ratings
D
www.irf.com
V
I
I
P
V
dv/dt
T
D
DM
R
GS
J,
SD
D
@ T
@ T
Complimentary Half Bridge
Generation V Technology
Surface Mount
Fully Avalanche Rated
@T
T
Ultra Low On-Resistance
JA
STG
A
A
A
= 70°C
= 25°C
= 25°C
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S2
S 1
N -C H A N N EL M O S FET
1
2
3
P -C H AN N E L MO S FET
4
T o p V ie w
N-Channel
5.8
4.6
5.0
30
46
HEXFET
8
7
6
5
-55 to + 150
D 1
D 1
D 2
Max.
D 2
0.02
± 20
2.5
Max.
S O -8
50
R
V
®
DS(on)
DSS
IRF7379
Power MOSFET
P-Channel
0.045
-4.3
-3.4
-5.0
-30
-34
N-Ch
30V
PD - 91625
0.090
P-Ch
-30V
Units
Units
°C/W
W/°C
V/ns
°C
W
A
V
1
12/8/98

Related parts for IRF7379

IRF7379 Summary of contents

Page 1

... Peak Diode Recovery dv/ Junction and Storage Temperature Range J, STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient JA www.irf.com FET FET Parameter N-Channel @ 10V GS @ 10V 91625 IRF7379 ® HEXFET Power MOSFET N-Ch P- 30V -30V DSS 0.045 0.090 DS(on Max. P-Channel 30 -30 5.8 -4.3 4.6 -3 ...

Page 2

... IRF7379 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... - rce V olta Fig 3. Typical Transfer Characteristics www.irf.com N-Channel 1000 100 4.5V 20µ 25° ° µ IRF7379 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. µ 150° 0 in-to-S ource V olta Fig 2. Typical Output Characteristics 150 ° ° 0.1 ...

Page 4

... IRF7379 2 4.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Tem perature (° Fig 5. Normalized On-Resistance Vs. Temperature 4 N-Channel 0.20 0.16 0.12 0.08 0. 10V 0. Fig 6. Typical On-Resistance Vs. Drain 0.08 0.07 0.06 0. 5.8A 0.04 0. Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage VGS = 4.5V VGS = 10V ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com N-Channel 100 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7379 2. 24V FIG Total G ate C harge ( Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage P DM Notes: 1. Duty factor ...

Page 6

... IRF7379 VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4. 0 rain-to-S ourc e V oltage ( Fig 11. Typical Output Characteristics 100 ° - lta Fig 13. Typical Transfer Characteristics 6 P-Channel - µ 5° 100 ° µ 100 VGS TOP - 15V - 10V - 8.0V - 7. ...

Page 7

... Fig 15. Normalized On-Resistance Vs. Temperature 0.16 0.14 0.12 0.10 0.08 0.06 www.irf.com P-Channel 0.50 0.40 0.30 0. 100 120 140 160 Fig 16. Typical On-Resistance Vs. Drain ID = -4. Gate-to-Source Voltage (V) GS Fig 17. Typical On-Resistance Vs. Gate Voltage IRF7379 VGS = -4.5V VGS = -10V Drain Current (A) D Current ...

Page 8

... IRF7379 iss iss C oss rss - rce V oltage ( Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 P-Channel 0.001 0. Rectangular Pulse Duration (sec -3. -24V FIG ...

Page 9

... MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6 Part Marking Information SO8 www.irf.com 45° 0.10 (.004 IRF7379 INCHES DIM MIN MAX A .0532 .0688 A1 .0040 .0098 B .014 .018 C .0075 .0098 D .189 .196 E .150 .157 e .050 BASIC e1 ...

Page 10

... IRF7379 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) ( & - SIO ILLIM LIN EIA-48 1 & E IA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR FAR EAST: K& ...

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