IRF7379 International Rectifier, IRF7379 Datasheet - Page 8

• Manufacturer Part Number: IRF7379
• Description: MOSFET N+P 30V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7379

IRF7379
8
100
0.1
1 0 0 0
10
0.00001
8 0 0
6 0 0
4 0 0
2 0 0
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
Fig 18. Typical Capacitance Vs.
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
-V
Drain-to-Source Voltage
D S
V
C
C
C
(THERMAL RESPONSE)
0.0001
G S
iss
rs s
o s s
, D ra in -to -S ou rce V oltage (V )
C
C
C
SINGLE PULSE
iss
oss
rss
= 0V ,
= C
= C
= C
g s
ds
gd
+ C
+ C
1 0
gd
g d
f = 1M H z
0.001
, C
ds
S H O R TE D
t , Rectangular Pulse Duration (sec)
1
0.01
P-Channel
1 0 0
A
20
16
12
8
4
0
0.1
0
I
V
Fig 19. Typical Gate Charge Vs.
D
D S
= -3.0A
= -24V
Gate-to-Source Voltage
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total G ate C harge (nC )
5
G
1
J
10
DM
x Z
1
thJA
P
2
FO R TE S T C IR C U IT
15
DM
S E E FIG U R E 22
+ T
10
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A
t
1
t
2
20
100
25
A