IRF7379 International Rectifier, IRF7379 Datasheet - Page 3

• Manufacturer Part Number: IRF7379
• Description: MOSFET N+P 30V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7379

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1 0 0 0
1 0 0
100
1 0
10
1
0.1
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
4
TOP
BOTTOM 4.5V
V
V
D S
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
G S
, D rain-to-S ourc e Voltage (V)
, G a te -to -S o u rce V olta ge (V )
T = 2 5 °C
J
1
6
7
T = 1 5 0 °C
20µ s P U LS E W ID T H
T = 25°C
V
2 0 µ s P U L S E W ID T H
J
4.5V
J
D S
1 0
= 1 5 V
8
9
1 0 0
N-Channel
10
A
A
1000
100
1 0 0
0.1
10
1 0
1
1
0.1
0.0
Fig 2. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
TOP
BOTTOM 4.5V
V
T = 150 °C
V
J
D S
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
S D
0.5
, D ra in-to-S ource V olta ge (V )
, S ource-to-D rain V oltage (V )
Forward Voltage
1
1.0
T = 25 °C
J
IRF7379
20 µ s P U L S E W ID TH
T = 150°C
J
1.5
4 .5V
10
2.0
V
G S
= 0V
100
3
2.5
A
A