BSD223P Infineon Technologies, BSD223P Datasheet

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OptiMOS -P Small-Signal-Transistor Feature Dual P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Type Package BSD 223P PG-SOT-363 Maximum Ratings Parameter Continuous drain current T =25° =70°C ...

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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µ Gate threshold voltage =-1.5µA D Zero ...

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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

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Power dissipation tot A BSD 223P 0.28 W 0.24 0.22 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0. Safe operating area ...

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Typ. output characteristic parameter =25° 0.5 10V 0.4 0.3 0.2 0 0.3 0.6 7 Typ. transfer characteristics ...

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Drain-source on-resistance DS(on) parameter -0. 1.6 1.2 1 0.8 0.6 0.4 0.2 0 -60 - Typ. capacitances parameter: V =0, ...

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Typ. avalanche energy par - 0.8 0.6 0.4 0 100 15 ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...