BSD223P Infineon Technologies, BSD223P Datasheet - Page 4

• Manufacturer Part Number: BSD223P
• Description: MOSFET 2P-CH 20V 390MA SOT363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD223P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 390mA
• Vgs(th) (max) @ Id: 1.2V @ 1.5µA
• Gate Charge (qg) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 56pF @ 15V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Package: SOT-363 dual
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 1,200.0 mOhm
• Rds (on) (max) (@2.5v): 2,100.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD223PINTR; BSD223PXT; BSD223PXTINTR; BSD223PXTINTR

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
-10
-10
Rev.1.3
-10
-10
0.28
0.24
0.22
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
= f (T
W
0.2
0.1
A
-1
-2
0
1
0
-10
0
BSD 223P
BSD 223P
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
DC
120
1
t p = 390.0µs
1 ms
10 ms
°C
V
T
V
A
DS
160
-10
Page 4
2
2 Drain current
I
parameter: |V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
-0.42
-0.36
-0.32
-0.28
-0.24
-0.16
-0.12
-0.08
-0.04
10
10
10
-0.2
10
10
10
10
A
= f (t
-1
-2
-3
0
3
2
1
0
10
0
A
BSD 223P
BSD 223P
-7
)
p
20
10
)
single pulse
-6
GS
40
10
| 4.5 V
p
/T
-5
60
10
-4
80
10
100
-3
10
2006-12-04
120
BSD 223P
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0