MMDF1N05ER2G ON Semiconductor, MMDF1N05ER2G Datasheet

MMDF1N05ER2G

Manufacturer Part Number

MMDF1N05ER2G

Description

MOSFET N-CHAN DUAL 2A 50V 8SOIC

Manufacturer

ON Semiconductor

Datasheet

1.MMDF1N05ER2.pdf (5 pages)

Specifications of MMDF1N05ER2G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

300 mOhm @ 1.5A, 10V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

12.5nC @ 10V

Input Capacitance (ciss) @ Vds

330pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Module Configuration

Dual

Transistor Polarity

N Channel

Continuous Drain Current Id

Drain Source Voltage Vds

50V

On Resistance Rds(on)

300mohm

Rds(on) Test Voltage Vgs

10V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MMDF1N05ER2GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMDF1N05ER2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 5
Download datasheet (76Kb)

MMDF1N05E

Power MOSFET

1 Amp, 50 Volts

N−Channel SO−8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOSt

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

February, 2006 − Rev. 8

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current − Continuous

Drain Current

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Operating and Storage Temperature Range

Total Power Dissipation @ T

Thermal Resistance, Junction−to−Ambient

(Note 1)

Maximum Temperature for Soldering,

Time in Solder Bath

These miniature surface mount MOSFETs feature ultra low R

Ultra Low R

Logic Level Gate Drive − Can Be Driven by Logic ICs

Miniature SO−8 Surface Mount Package − Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed

Avalanche Energy Specified

Mounting Information for SO−8 Package Provided

Pb−Free Package is Available

one die operating, 10 sec. max.

DSS

= 25 V, V

Specified at Elevated Temperature

− Pulsed

DS(on)

= 10 V, I

Rating

= 25°C

Provides Higher Efficiency and Extends Battery Life

= 2 Apk)

= 25°C unless otherwise noted)

= 25°C

Symbol

, T

qJA

stg

−55 to 150

Value

± 20

62.5

300

260

2.0

DS(on)

°C/W

Unit

Sec

°C

†For information on tape and reel specifications,

MMDF1N05ER2

MMDF1N05ER2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

Source−1

Source−2

Gate−1

Gate−2

1 AMPERE, 50 VOLTS

ORDERING INFORMATION

F1N05 = Device Code

DS(on)

http://onsemi.com

PIN ASSIGNMENT

CASE 751

STYLE 11

N−Channel

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

SO−8

Top View

Package

SO−8

= 300 mW

Publication Order Number:

2,500/Tape & Reel

Drain−1

Drain−2

MMDF1N05E/D

MARKING

DIAGRAM

Shipping

AYWWG

F1N05

†

Related parts for MMDF1N05ER2G

MMDF1N05ER2G Summary of contents

Page 1

... P 2 °C/W R 62.5 qJA °C T 260 L 10 Sec MMDF1N05ER2 MMDF1N05ER2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 1 AMPERE, 50 VOLTS R = 300 mW DS(on) N−Channel MARKING ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 250 mA Zero Gate Voltage Drain Current ( Gate−Body Leakage Current ( Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.5 0.4 0.3 0.2 0 ...

Page 4

1200 C iss C 1000 rss 800 600 400 200 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation SAFE OPERATING AREA INFORMATION Forward Biased Safe ...

Page 5

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MiniMOS is a trademark of Semiconductor Components Industries, LLC (SCILLC). Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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