MMDF1N05ER2G ON Semiconductor, MMDF1N05ER2G Datasheet - Page 2

• Manufacturer Part Number: MMDF1N05ER2G
• Description: MOSFET N-CHAN DUAL 2A 50V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF1N05ER2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMDF1N05ER2GOS

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage (V
Drain−to−Source On−Resistance
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Forward Voltage (Note 2)
Reverse Recovery Time
(V
(V
(V
(V
(V
GS
DS
GS
GS
GS
= 50 V, V
= 0, I
= 20 Vdc, V
= 10 Vdc, I
= 4.5 Vdc, I
D
= 250 mA)
GS
D
D
DS
= 0)
= 1.5 Adc)
= 0.6 Adc)
= 0)
DS
= V
DS
Characteristic
GS
= 15 V, I
, I
D
= 250 mAdc)
(V
(T
D
DD
A
= 1.5 A)
= 25°C unless otherwise noted)
= 10 V, I
(V
V
(I
(V
S
G
DS
(dI
DS
= 1.5 A, V
= 10 V, R
C
S
= 10 V, I
f = 1.0 MHz)
V
= 25 V, V
= 25°C)
/dt = 100 A/ms)
GS
D
= 1.5 A, R
= 10 V)
http://onsemi.com
MMDF1N05E
G
D
GS
= 50 W)
GS
= 1.5 A,
= 0 V)
= 0,
L
2
= 10 W,
V
Symbol
R
R
V
(BR)DSS
t
t
I
C
I
DS(on)
DS(on)
C
GS(th)
C
Q
V
g
d(on)
d(off)
Q
DSS
GSS
Q
t
FS
oss
t
t
rss
SD
iss
rr
gs
gd
r
f
g
Min
1.0
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
12.5
Typ
330
160
1.5
1.9
3.0
45
50
−
−
−
−
−
−
−
−
−
−
−
Max
0.30
0.50
100
3.0
1.6
20
30
40
25
−
2
−
−
−
−
−
−
−
−
mhos
mAdc
nAdc
Unit
Vdc
Vdc
nC
pF
ns
ns
W
V