NTMD2C02R2SG ON Semiconductor, NTMD2C02R2SG Datasheet - Page 3

• Manufacturer Part Number: NTMD2C02R2SG
• Description: MOSFET N/P-CH COMPL 20V 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD2C02R2SG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 3.4A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1100pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6. Negative signs for P−Channel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
SOURCE−DRAIN DIODE CHARACTERISTICS (T
ELECTRICAL CHARACTERISTICS − continued
Forward Voltage (Note 7)
Reverse Recovery Time
Reverse Recovery Stored Charge
12
10
12
10
8
6
4
2
0
8
6
4
2
0
0
0.5
10 V
Figure 3. Transfer Characteristics
V
V
V
Figure 1. On−Region Characteristics
0.25
DS
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
≥ 10 V
1
2.5 V
0.5
Characteristic
N−Channel
0.75
100°C
4.5 V
3.2 V
1.5
(I
(I
S
S
TYPICAL ELECTRICAL CHARACTERISTICS
1
T
= 4.0 Adc, V
= 2.4 Adc, V
J
dI
V
= −55°C
S
GS
/dt = 100 A/ms)
1.25
(I
= 1.5 V
F
25°C
C
2.0 V
1.8 V
2
= I
= 25°C)
T
GS
GS
S
J
,
1.5
= 25°C
= 0 Vdc)
= 0 Vdc)
(T
http://onsemi.com
A
= 25°C unless otherwise noted) (Note 6)
1.75
2.5
3
Symbol
Q
V
t
t
t
SD
RR
rr
a
b
4
3
2
1
0
5
4
3
2
1
0
1
0
T
J
T
V
−V
= 100°C
−V
J
DS
Polarity
= 25°C
Figure 2. On−Region Characteristics
DS
GS
V
V
V
Figure 4. Transfer Characteristics
≥ −10 V
(N)
(N)
(N)
(N)
(N)
(P)
(P)
(P)
(P)
(P)
GS
GS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
= −10 V
= −4.5 V
= −2.5 V
1.5
V
GS
= −2.1 V
T
Min
J
P−Channel
−
−
−
−
−
−
−
−
−
−
= 55°C
4
2
V
V
V
0.025
0.83
0.88
0.02
Typ
GS
GS
GS
30
37
15
16
15
21
= −1.9 V
= −1.7 V
= −1.5 V
6
Max
1.1
1.0
2.5
−
−
−
−
−
−
−
−
T
J
8
= 25°C
Unit
Vdc
mC
ns
10
3