NTMD2C02R2SG ON Semiconductor, NTMD2C02R2SG Datasheet - Page 4

• Manufacturer Part Number: NTMD2C02R2SG
• Description: MOSFET N/P-CH COMPL 20V 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD2C02R2SG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 3.4A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1100pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.05
0.04
0.03
0.02
0.01
1.6
1.4
1.2
0.8
0.6
0
1
−50
0
Figure 7. On−Resistance versus Drain Current
1
Figure 9. On−Resistance Variation with
V
−25
GS
T
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
Figure 5. On−Resistance versus
= 25°C
2
T
I
V
J
D
, JUNCTION TEMPERATURE (°C)
GS
I
Gate−To−Source Voltage
0
D
= 6.0 A
, DRAIN CURRENT (AMPS)
and Gate Voltage
= 4.5 V
5
Temperature
25
4
N−Channel
V
GS
4.5 V
= 2.5 V
50
7
TYPICAL ELECTRICAL CHARACTERISTICS
6
75
I
T
9
D
J
= 6.0 A
= 25°C
100
8
11
http://onsemi.com
125
13
10
150
4
0.15
0.05
0.08
0.06
0.04
0.12
0.2
0.1
1.6
1.4
1.2
0.8
0.6
0.1
0
1
−50
Figure 8. On−Resistance versus Drain Current
2
1
T
J
V
= 25°C
T
I
Figure 10. On−Resistance Variation with
−V
GS
D
−25
J
= −2.4 A
1.5
= 25°C
GS,
= −4.5 V
Figure 6. On−Resistance versus
T
GATE−TO−SOURCE VOLTAGE (VOLTS)
J,
−I
0
JUNCTION TEMPERATURE (°C)
Gate−To−Source Voltage
D,
2
and Gate Voltage
DRAIN CURRENT (AMPS)
4
25
Temperature
P−Channel
V
V
2.5
GS
GS
= −2.7 V
= −4.5 V
50
3
75
6
3.5
100
125
4
150
4.5
8