FDY102PZ Fairchild Semiconductor, FDY102PZ Datasheet - Page 4
![MOSFET P-CH 20V 830MA SC89-3](/photos/5/45/54558/fdy102pz_sml.jpg)
FDY102PZ
Manufacturer Part Number
FDY102PZ
Description
MOSFET P-CH 20V 830MA SC89-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDY102PZ.pdf
(7 pages)
Specifications of FDY102PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 830mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
830mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
135pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.5 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.83 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY102PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY102PZ-NL
Manufacturer:
ON/安森美
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
Typical Characteristics
10
10
10
10
10
Figure 7.
-1
-3
5
4
3
2
1
0
5
3
1
0.2
0.0
30
10
0
Figure 9. Gate Leakage Current
1
10
I
-3
D
V
= -0.83 A
GS
vs Gate to
= 0 V
0.5
-V
Gate Charge Characteristics
3
GS ,
V
DD
GATE TO SOURCE VOLTAGE (V)
T
J
= -8 V
1.0
Q
= 125
V
g
, GATE CHARGE (nC)
GS
Source Voltage
10
6
= -4.5 V
o
-2
C
V
Figure 11. Single Pulse Maximum Power Dissipation
1.5
DD
= -12 V
T
J
V
T
9
DD
J
= 25 °C unless otherwise noted
= 25
2.0
= -10 V
o
C
10
12
2.5
-1
t, PULSE WIDTH (sec)
3.0
15
4
10
0
0.01
500
0.1
100
10
2
1
1
0.1
0.1
Figure 10.
Figure 8.
f = 1 MHz
V
GS
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
T
= 0 V
JA
10
= MAX RATED
= 25
-V
-V
= 280
1
DS
DS
to Source Voltage
o
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
C
Operating Area
Capacitance vs Drain
o
Forward Bias Safe
C/W
DS(on)
1
1
100
SINGLE PULSE
R
T
A
T
JA
= 25
= 280
10
o
C
o
C/W
www.fairchildsemi.com
C
C
C
rss
10 ms
100 ms
1 s
10 ms
10
1 ms
DC
iss
oss
1000
20
60