FDY102PZ Fairchild Semiconductor, FDY102PZ Datasheet - Page 5
![MOSFET P-CH 20V 830MA SC89-3](/photos/5/45/54558/fdy102pz_sml.jpg)
FDY102PZ
Manufacturer Part Number
FDY102PZ
Description
MOSFET P-CH 20V 830MA SC89-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDY102PZ.pdf
(7 pages)
Specifications of FDY102PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 830mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
830mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
135pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.5 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.83 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY102PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY102PZ-NL
Manufacturer:
ON/安森美
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
Typical Characteristics
0.02
0.1
1
2
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 12.
10
-2
SINGLE PULSE
R
T
JA
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 280
= 25 °C unless otherwise noted
o
C/W
10
-1
t, RECTANGULAR PULSE DURATION (sec)
5
10
0
10
NOTES:
DUTY FACTOR: D = t
PEAK T
1
J
= P
DM
x Z
P
TJA
DM
1
/t
100
x R
2
TJA
t
1
+ T
t
2
A
www.fairchildsemi.com
1000