FDS9431A Fairchild Semiconductor, FDS9431A Datasheet - Page 2

• Manufacturer Part Number: FDS9431A
• Description: MOSFET P-CH 20V 3.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS9431A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 405pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.13Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9431A

Notes:
1: R
2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Electrical Characteristics
Off Characteristics
BV
DBV
I
I
I
On Characteristics
V
DV
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
Scale 1 : 1 on letter size paper
FS
GS(th)
SD
DS(on)
iss
oss
rss
DT
DT
g
gs
gd
DSS
GS(th)
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
JC
is guaranteed by design while R
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Parameter
(Note 2)
a) 50 C/W when
mounted on a 1 in
pad of 2 oz. copper.
CA
(Note 2)
is determined by the user's board design.
2
T
A
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
T
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
J
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
=125°C
= -250 mA,Referenced to 25°C
= -250 mA,Referenced to 25°C
= 0 V, I
= -16 V, V
= 8 V, V
= -8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -4.5 V, I
= -4.5 V, V
= -5 V, I
= -10 V, V
= -5 V, I
= -4.5 V, R
= -5 V, I
= -4.5 V
= 0 V, I
Test Conditions
GS
, I
b) 105 C/W when
D
S
D
D
D
mounted on a 0.04 in
pad of 2 oz. copper.
D
DS
DS
= -2.1 A
= -250 mA
= -250 mA
= -3.5 A
= -1 A,
= -3.5 A,
D
D
D
GS
GS
DS
= 0 V
GEN
= 0 V
= -3.5 A
= -3.0 A
= -3.5 A
= 0 V,
= 0 V
=-5 V
= 6 W
(Note 2)
2
Min
-0.4
-20
-10
0.110
0.140
0.155
Typ Max Units
-0.6
405
170
-0.7
-28
6.5
6.5
0.8
1.3
45
20
31
21
2
6
c) 125 C/W on a minimum
mounting pad.
0.130
0.180
0.220
-100
-2.1
-1.2
100
8.5
13
35
50
35
-1
-1
FDS9431A Rev. A2
mV/°C
mV/°C
mA
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
W
W
W
V
V
A
S
A
V