FDS9431A Fairchild Semiconductor, FDS9431A Datasheet - Page 3

• Manufacturer Part Number: FDS9431A
• Description: MOSFET P-CH 20V 3.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS9431A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 405pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.13Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9431A

Typical Characteristics
10
10
8
6
4
2
0
1.6
1.4
1.2
0.8
0.6
8
6
4
2
0
Figure 1. On-Region Characteristics.
0
1
0
-50
Figure 5. Transfer Characteristics.
V
Figure 3. On-Resistance Variation
V
GS
V
DS
I = -1.6A
= -4.5V
D
GS
= -5V
-25
= -4.5V
1
-V
-V
withTemperature.
DS
1
GS
T , JUNCTION TEMPERATURE (°C)
0
-3.5V
, DRAIN TO SOURCE VOLTAGE (V)
J
, GATE TO SOURCE VOLTAGE (V)
25
2
T = -55°C
-2.0V
A
-1.5V
-2.5V
2
50
3
25°C
75
125°C
100
3
4
125
5
150
4
0.0001
0.001
1.8
1.6
1.4
1.2
0.8
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.5
0.4
0.3
0.2
0.1
0.1
Figure 6. Body Diode Forward Voltage
2
1
10
0
1
0
1
0
Drain Current and Gate Voltage.
V
V
GS
Variation with Source Current
GS
= -2.0V
= 0V
Gate-to-Source Voltage.
0.2
-V
T = 125°C
J
2
SD
-V
and Temperature.
, BODY DIODE FORWARD VOLTAGE (V)
GS
2
0.4
,GATE TO SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
D
-2.5
25°C
4
T = 125°C
0.6
J
-55°C
-3.0
3
0.8
25°C
6
-3.5
1
-4.0
4
I = -0.8A
8
D
1.2
-4.5
FDS9431A Rev. A2
1.4
5
10