FDS9431A Fairchild Semiconductor, FDS9431A Datasheet - Page 4

• Manufacturer Part Number: FDS9431A
• Description: MOSFET P-CH 20V 3.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS9431A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 405pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.13Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9431A

Typical Characteristics
0. 05
0. 01
5
4
3
2
1
0
0 .5
Figure 9. Maximum Safe Operating Area.
Figure 7. Gate Charge Characteristics.
50
10
0
3
0 .1
I
D
SINGLE PULSE
R
= -1.6A
SING L E PUL SE
R
V
JA
T
V
GS
J A
T = 2 5°C
A
G S
= 125°C/W
A
0. 0 05
0. 0 02
0. 0 01
= 135 °C/W
A
= 25°C
= -4.5V
0 .05
0 .02
0 .01
= -4.5V
0 .3
0.5
0.2
0.1
0.0 001
1
- V
2
D S
D = 0 .5
, DR A IN -SO UR C E V OLTA GE (V)
Q g , G ATE C H ARG E (nC )
0 .2
1
0 .1
0 . 0 5
0 . 0 2
4
0. 0 01
Figure 11. Transient Thermal Response Curve.
2
V
0 .0 1
D S
= -5V
S i n g l e P u l s e
-15V
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
5
(continued)
6
10
0 .01
30
8
t , TI ME (s e c )
0.1
1
2000
1000
500
200
100
50
40
30
20
10
Figure 8. Capacitance Characteristics.
50
0
0.001
0.1
Figure 10. Single Pulse Maximum
f = 1 M Hz
V
1
G S
0.2
= 0 V
0.01
-V
Power Dissipation.
DS
, D R A IN T O S OU R CE V OLTA GE (V)
0.5
SINGLE PULSE TIME (SEC)
0.1
P(p k )
10
D u t y C y c l e, D = t /t
1
T - T = P * R
R
J
R
J A
t
1
A
(t) = r(t) * R
J A
1
2
t
2
= 125°C / W
SINGLE PULSE
R
JA
T
JA
= 125
A
100
= 25
10
5
( t )
J A
1
o
o
2
C/W
C
10
300
C iss
C rss
C oss
FDS9431A Rev. A2
100
20
1000