SI1433DH-T1-E3 Vishay, SI1433DH-T1-E3 Datasheet

MOSFET P-CH 30V 1.9A SC70-6

SI1433DH-T1-E3

Manufacturer Part Number
SI1433DH-T1-E3
Description
MOSFET P-CH 30V 1.9A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1433DH-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
3V @ 100µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Power - Max
950mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.15 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
950 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.2A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
260mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1433DH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1433DH-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
62 193
Part Number:
SI1433DH-T1-E3
Manufacturer:
Maxim
Quantity:
40
Part Number:
SI1433DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 72323
S10-0935-Rev. C, 19-Apr-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
0.260 at V
0.150 at V
R
DS(on)
J
a
= 150 °C)
GS
a
GS
G
Ordering Information: Si1433DH-T1-E3 (Lead (Pb)-free)
D
D
= - 4.5 V
(Ω)
= - 10 V
P-Channel 30 V (D-S) MOSFET
1
2
3
SC-70 (6-LEADS)
a
SOT-363
Top View
a
A
Si1433DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
= 25 °C, unless otherwise noted
- 2.2
- 1.6
D
Steady State
Steady State
6
5
4
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
D
D
S
Marking Code
BE
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
• Load Switches
Symbol
Symbol
T
XX
Part # Code
Definition
- Notebook PC
- Servers
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
Lot Traceability
and Date Code
®
Power MOSFETs: 1.8 V Rated
Typical
- 2.2
- 1.7
- 1.4
1.45
0.75
105
5 s
65
38
- 55 to 150
± 20
- 30
- 8
Steady State
Maximum
- 1.9
- 1.4
- 0.9
0.95
130
0.5
85
48
Vishay Siliconix
Si1433DH
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1433DH-T1-E3

SI1433DH-T1-E3 Summary of contents

Page 1

... 0.260 4 SC-70 (6-LEADS Ordering Information: Si1433DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si1433DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72323 S10-0935-Rev. C, 19-Apr- °C J 0.9 1.2 1.5 Si1433DH Vishay Siliconix 350 280 C iss 210 140 C oss 70 C rss Drain-to-Source Voltage (V) DS Capacitance 1 2 1.4 1.2 1.0 ...

Page 4

... Si1433DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0 250 µA D 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 10 Limited DS(on °C C Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72323. Document Number: 72323 S10-0935-Rev. C, 19-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1433DH Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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