SI1433DH-T1 VISHAY [Vishay Siliconix], SI1433DH-T1 Datasheet

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SI1433DH-T1

Manufacturer Part Number
SI1433DH-T1
Description
P-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Part Number:
SI1433DH-T1-E3
Manufacturer:
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Notes
a.
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 30
- 30
(V)
J
ti
t A bi
0.260 @ V
0.150 @ V
J
J
a
a
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
GS
GS
a
a
= - 4.5 V
= - 10 V
(W)
P-Channel 30-V (D-S) MOSFET
a
D
D
G
Ordering Information: Si1433DH-T1
1
2
3
SC-70 (6-LEADS)
A
= 25_C UNLESS OTHERWISE NOTED)
SOT-363
Top View
Steady State
Steady State
T
T
T
T
t v 5 sec
I
New Product
A
A
A
A
D
- 2.2
- 1.6
= 25_C
= 85_C
= 25_C
= 85_C
(A)
6
5
4
D
D
S
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switches
Marking Code
BE
- Notebook PCs
- Servers
Typical
5 secs
XX
Part # Code
1.45
0.75
- 2.2
- 1.7
- 1.4
105
65
38
Lot Traceability
and Date Code
- 55 to 150
"20
- 30
- 8
Steady State
Maximum
Vishay Siliconix
0.95
- 1.9
- 1.4
- 0.9
130
0.5
85
48
Si1433DH
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI1433DH-T1 Summary of contents

Page 1

... D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package I (A) D APPLICATIONS - 2.2 D Load Switches - 1.6 SOT-363 SC-70 (6-LEADS Marking Code Top View Ordering Information: Si1433DH-T1 = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 85_C 25_C A ...

Page 2

... Si1433DH Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... J 0.1 0.00 0.3 0.6 0 Source-to-Drain Voltage (V) SD Document Number: 72323 S-31668—Rev. A, 11-Aug-03 New Product 25_C 1.2 1.5 Si1433DH Vishay Siliconix Capacitance 350 280 C iss 210 140 C oss 70 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.6 ...

Page 4

... Si1433DH Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 = 250 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 0.001 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72323 S-31668—Rev. A, 11-Aug-03 New Product Normalized Thermal Transient Impedance, Junction-to-Foot -2 10 Square Wave Pulse Duration (sec) Si1433DH Vishay Siliconix - www.vishay.com 5 ...

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