SI1433DH-T1-E3 Vishay, SI1433DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1433DH-T1-E3
• Description: MOSFET P-CH 30V 1.9A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1433DH-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 3V @ 100µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 950 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 260mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1433DH-T1-E3TR

Si1433DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
0.05
0.02
-4
0.2
0.1
Duty Cycle = 0.5
- 25
I
0
D
Single Pulse
= 250 µA
Threshold Voltage
T
J
10
25
- Temperature (°C)
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
10
0.1
100
10
-2
1
0.1
Limited by
R
* V
DS(on)
125
GS
Single Pulse
T
>
C
*
150
minimum V
= 25 °C
V
Square Wave Pulse Duration (s)
DS
Safe Operating Area
10
- Drain-to-Source Voltage (V)
-1
1
GS
at which R
10
DS(on)
1
35
28
21
14
0.001
7
0
is specified
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
Time (s)
A
1
= P
t
0.1
S10-0935-Rev. C, 19-Apr-10
2
DM
Document Number: 72323
Z
thJA
thJA
100
t
t
1
2
(t)
= 105 °C/W
1
600
10