SI1450DH-T1-E3 Vishay, SI1450DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1450DH-T1-E3
• Description: MOSFET N-CH 8V 6.04A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1450DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6.04A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.05nC @ 5V
• Input Capacitance (ciss) @ Vds: 535pF @ 4V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 8V
• On Resistance Rds(on): 69mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1450DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74275
S10-0646-Rev. B, 22-Mar-10
0.10
0.08
0.06
0.04
0.02
0.00
5
4
3
2
1
0
15
12
9
6
3
0
0.0
0
0
I
D
= 4.4 A
0.5
3
V
R
DS
2
Q
Output Characteristics
DS(on)
g
V
- Drain-to-Source Voltage (V)
V
GS
I
- Total Gate Charge (nC)
D
GS
Gate Charge
- Drain Current (A)
= 1.5 V
1.0
vs. Drain Current
= 5 V thru 2 V
6
V
3
DS
= 4 V
1.5
9
V
V
V
GS
GS
GS
V
V
V
= 1.8 V
GS
5
GS
GS
= 6.4 V
= 1.5 V
2.0
12
= 4.5 V
= 1 V
= 2.5 V
2.5
15
6
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
3
2
1
0
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
C
V
V
T
oss
GS
T
GS
C
V
C
V
= 125 °C
0.5
Transfer Characteristics
GS
DS
= 2.5 V, I
2
= 1.8 V, I
T
= 25 °C
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
iss
Capacitance
25
D
D
= 4.4 A
= 4.25 A
1.0
Vishay Siliconix
50
4
75
Si1450DH
T
V
I
C
D
GS
= - 55 °C
= 4.6 A
www.vishay.com
1.5
= 4.5 V
V
100
I
6
D
GS
= 1.2 A
= 1.5 V
125
2.0
150
8
3