SI1450DH-T1-E3 Vishay, SI1450DH-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1450DH-T1-E3
• Description: MOSFET N-CH 8V 6.04A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1450DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6.04A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.05nC @ 5V
• Input Capacitance (ciss) @ Vds: 535pF @ 4V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 8V
• On Resistance Rds(on): 69mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1450DH-T1-E3TR

Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74275.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.2
0.02
0.02
0.1
0.05
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S10-0646-Rev. B, 22-Mar-10
= P
t
2
Document Number: 74275
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 100 °C/W
600
10