SI1450DH-T1-E3 Vishay, SI1450DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1450DH-T1-E3
• Description: MOSFET N-CH 8V 6.04A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1450DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6.04A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.05nC @ 5V
• Input Capacitance (ciss) @ Vds: 535pF @ 4V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 8V
• On Resistance Rds(on): 69mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1450DH-T1-E3TR

Si1450DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0
Forward Diode Voltage vs. Temperature
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
T
25
- Temperature (°C)
0.4
J
= 150 °C
50
I
D
0.6
= 250 µA
75
0.001
0.01
100
0.1
T
10
100
J
1
0.1
= 25 °C
0.8
* V
Limited by R
Safe Operating Area, Junction-to-Case
125
GS
Single Pulse
T
> minimum V
A
V
= 25 °C
DS
150
1.0
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
10
DC
10 ms
100 ms
1 s
10 s
DS(on)
BVDSS Limited
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
0.001
5
0
is specified
0
I
D
= 4.4 A
0.01
R
100
DS(on)
1
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
vs. V
0.1
2
Time (s)
GS
S10-0646-Rev. B, 22-Mar-10
vs. Temperature
1
Document Number: 74275
3
10
T
T
A
A
= 25 °C
= 125 °C
4
100
600
5