SI1065X-T1-GE3 Vishay, SI1065X-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1065X-T1-GE3
• Description: MOSFET P-CH 12V 1.18A SC89-6
• Manufacturer: Vishay

Specifications of SI1065X-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1.18A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 6V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.18A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 205mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1065X-T1-GE3TR

TYPICAL CHARACTERISTICS (T
Document Number: 74320
S10-2542-Rev. C, 08-Nov-10
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
5
4
3
2
1
0
0.0
0
0
I
D
V
= 1.18 A
GS
On-Resistance vs. Drain Current
= 1.8 V
0.6
V
DS
2
2
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
1.2
V
4
4
DS
V
V
GS
GS
= 6 V
1.8
V
= 5 V thru 2.5 V
= 2.5 V
DS
V
V
GS
V
= 9.6 V
GS
GS
= 1.5 V
A
= 1.0 V
V
6
6
= 2 V
GS
= 25 °C, unless otherwise noted)
2.4
= 4.5 V
3.0
8
8
1000
800
600
400
200
2.0
1.5
1.0
0.5
0.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
- 50
0.0
0
Transfer Characteristics Curves vs. Temp.
On-Resistance vs. Junction Temperature
- 25
V
V
V
0.5
DS
GS
3
0
GS
T
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
C
- Gate-to-Source Voltage (V)
GS
= 125 °C
Capacitance
C
25
rss
= 2.5 V, I
T
C
= 25 °C
1.0
50
V
6
Vishay Siliconix
GS
D
V
GS
= 4.5 V, I
= 1.07 A
75
C
= 1.8 V, I
C
iss
oss
T
Si1065X
100
www.vishay.com
1.5
C
D
9
= 1.18 A
= - 55 °C
D
= 0.94 A
125
2.0
150
12
3