SI1065X-T1-GE3 Vishay, SI1065X-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI1065X-T1-GE3
• Description: MOSFET P-CH 12V 1.18A SC89-6
• Manufacturer: Vishay

Specifications of SI1065X-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1.18A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 6V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.18A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 205mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1065X-T1-GE3TR

Si1065X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.01
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
T
= 150 °C
J
- Temperature (°C)
25
0.4
50
0.6
0.001
75
0.01
Limited by R
0.1
10
1
I
A
D
0.1
= 250 µA
T
100
= 25 °C, unless otherwise noted)
J
= 25 °C
0.8
* V
Safe Operating Area, Junction-to-Ambient
DS(on)
125
GS
Single Pulse
T
> minimum V
A
V
*
= 25 °C
DS
150
1
- Drain-to-Source Voltage (V)
1
GS
at which R
- 12.5
- 13.5
- 12
- 13
- 14
DS(on)
0.24
0.18
0.12
0.06
0.00
10
- 50 - 25
BVDSS Limited
0
10 ms
10 s
1 ms
100 ms
1 s
DC
is specified
I
D
= 1.09 A
R
DS(on)
1
V
100
GS
0
BVDSS vs. Temparture
- Gate-to-Source Voltage (V)
vs. V
25
Temperature (°C)
2
GS
50
vs. Temperature
S10-2542-Rev. C, 08-Nov-10
Document Number: 74320
T
A
3
75
= 25 °C
100
T
A
= 125 °C
4
125
150
5