SI3433BDV-T1-E3 Vishay, SI3433BDV-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI3433BDV-T1-E3
• Description: MOSFET P-CH 20V 4.3A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3433BDV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 850mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.042 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3433BDV-T1-E3TR

Notes
a.
b.
www.vishay.com
2-2
Si3433
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
a
- Drain-to-Source Voltage (V)
1.5
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
V
GS
2.5
= 5 thru 2.5 V
Symbol
3.0
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
3.5
1.5 V
2 V
1 V
4.0
New Product
V
DS
I
V
D
DS
^ - 1 A, V
= - 10 V, V
I
F
V
= - 16 V, V
V
V
V
V
V
V
V
V
GS
= - 1.7 A, di/dt = 100 A/ms
DS
GS
I
DS
V
S
DS
DS
DD
DD
Test Condition
GS
DS
= - 1.7 A, V
= - 4.5 V, I
= - 5 V, V
= V
= - 2.5 V, I
= - 16 V, V
= - 5 V, I
= - 10 V, R
= - 10 V, R
= - 1.8 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
D
GS
= - 250 mA
D
D
GS
GS
D
= - 5.6 A
L
L
= - 4.5 V
= - 4.8 A
= - 5.6 A
= 10 W
= 10 W
= - 1 A
= "8 V
= 0 V
= 0 V
J
20
16
12
D
= 85_C
G
8
4
0
= - 5.6 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
Min
- 0.45
- 20
- Gate-to-Source Voltage (V)
1.0
T
C
1.5
0.025
0.048
0.066
Typ
11.5
- 0.7
1.7
25_C
16
18
25
80
45
30
= - 55_C
3
S-00624—Rev. A, 03-Apr-00
Document Number: 71160
2.0
"100
Max
0.042
0.057
0.080
- 1.2
160
125_C
17
36
50
90
50
- 1
- 5
2.5
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
3.0