SI3433BDV-T1-E3 Vishay, SI3433BDV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3433BDV-T1-E3
• Description: MOSFET P-CH 20V 4.3A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3433BDV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 850mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.042 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3433BDV-T1-E3TR

Document Number: 71160
S-00624—Rev. A, 03-Apr-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.6 A
0.2
On-Resistance vs. Drain Current
= 10 V
4
V
SD
Q
3
g
V
- Source-to-Drain Voltage (V)
I
0.4
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
= 2.5 V
V
8
GS
T
0.6
= 1.8 V
6
J
= 150_C
12
0.8
V
T
GS
9
J
= 25_C
16
= 4.5 V
1.0
1.2
20
12
New Product
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 5.6 A
= 4.5 V
1
4
T
V
V
0
J
C
GS
DS
C
oss
- Junction Temperature (_C)
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
Vishay Siliconix
50
= 5.6 A
12
3
75
100
Si3433
16
www.vishay.com
4
125
150
20
5
2-3