SI3433BDV-T1-E3 Vishay, SI3433BDV-T1-E3 Datasheet - Page 4
![MOSFET P-CH 20V 4.3A 6-TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3433BDV-T1-E3
Manufacturer Part Number
SI3433BDV-T1-E3
Description
MOSFET P-CH 20V 4.3A 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI3433BDV-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
42 mOhm @ 5.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.042 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.3 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3433BDV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3433BDV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.vishay.com
2-4
Si3433
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
10
-4
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
- Temperature (_C)
25
10
-3
Single Pulse
I
D
50
= 250 mA
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
New Product
-2
10
-1
10
1
-1
30
24
18
12
6
0
10
-2
10
10
-1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
- T
t
1
A
Time (sec)
1
1
= P
t
2
DM
T
A
Z
= 25_C
thJA
thJA
100
t
t
S-00624—Rev. A, 03-Apr-00
10
1
2
(t)
Document Number: 71160
= 360_C/W
100
600
10
600