SIA814DJ-T1-GE3 Vishay, SIA814DJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA814DJ-T1-GE3
• Description: MOSFET N-CH 30V 4.5A SC70-6
• Manufacturer: Vishay

Specifications of SIA814DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Transistor Polarity: N Channel + Schottky Diode
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIA814DJ-T1-GE3TR

SiA814DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.155
0.130
0.105
0.080
0.055
0.030
15
12
10
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 4.3 A
V
0.5
GS
3
V
= 2.5 V
DS
2
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
1.0
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
6
V
GS
V
1.5
DS
= 10 thru 3 V
4
V
V
GS
= 15 V
GS
9
= 4.5 V
= 10 V
2.0
V
DS
V
V
6
GS
= 24 V
GS
12
2.5
= 1 V
= 2 V
New Product
A
3.0
15
8
= 25 °C, unless otherwise noted
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
5
4
3
2
1
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
I
- 25
D
= 3.3 A
C
0.5
oss
V
V
C
GS
Transfer Characteristics
DS
iss
T
0
J
T
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
C
10
= 125 °C
25
Capacitance
1.0
T
50
S-81176-Rev. A, 26-May-08
C
Document Number: 68672
= 25 °C
1.5
V
75
GS
20
= 10 V, 4.5 V
100
V
T
GS
C
2.0
= - 55 °C
= 2.5 V
125
150
2.5
30