SIA814DJ-T1-GE3 Vishay, SIA814DJ-T1-GE3 Datasheet - Page 9

• Manufacturer Part Number: SIA814DJ-T1-GE3
• Description: MOSFET N-CH 30V 4.5A SC70-6
• Manufacturer: Vishay

Specifications of SIA814DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Transistor Polarity: N Channel + Schottky Diode
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIA814DJ-T1-GE3TR

SCHOTTKY TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 68672
S-81176-Rev. A, 26-May-08
0.01
0.1
0.1
1
1
http://www.vishay.com/ppg?68672.
10
10
-4
-3
0.1
Duty Cycle = 0.5
0.2
Single Pulse
0.2
Duty Cycle = 0.5
Single Pulse
0.1
0.05
0.02
10
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
A
10
= 25 °C, unless otherwise noted
-1
1
10
-1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
A
t
1
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
thJA
SiA814DJ
t
t
1
2
(t)
= 85 °C/W
www.vishay.com
1
0
0
0
1
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