FDS8813NZ Fairchild Semiconductor, FDS8813NZ Datasheet

MOSFET N-CH 30V 18.5A 8-SOIC

FDS8813NZ

Manufacturer Part Number
FDS8813NZ
Description
MOSFET N-CH 30V 18.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS8813NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 18.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
18.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
76nC @ 10V
Input Capacitance (ciss) @ Vds
4145pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 m Ohms
Forward Transconductance Gfs (max / Min)
74 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8813NZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS8813NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS8813NZ
Quantity:
28
Part Number:
FDS8813NZ-NL
Manufacturer:
FAIRCHILD
Quantity:
12 615
Part Number:
FDS8813NZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C1
FDS8813NZ
N-Channel PowerTrench
30V, 18.5A, 4.5mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
D
DS
GS
AS
D
J
θJC
θJA
θJA
Max r
Max r
HBM ESD protection level of 5.6KV typical (note 3)
High performance trench technology for extremely low r
High power and current handling capability
RoHS compliant
, T
Symbol
Device Marking
STG
FDS8813NZ
DS(on)
DS(on)
SO-8
= 4.5mΩ at V
= 6.0mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
D
Pin 1
D
GS
GS
D
= 10V, I
= 4.5V, I
D
-Continuous
-Pulsed
FDS8813NZ
D
D
= 18.5A
Device
=16A
S
T
®
A
S
= 25°C unless otherwise noted
MOSFET
S
Parameter
G
DS(on)
1
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Reel Size
13”
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
(Note 4)
Tape Width
12mm
-55 to +150
Ratings
18.5
±20
337
125
2.5
1.0
30
25
50
74
®
process that has
November 2008
2500 units
Quantity
www.fairchildsemi.com
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDS8813NZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking FDS8813NZ ©2008 Fairchild Semiconductor Corporation FDS8813NZ Rev.C1 ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = 18.5A D Semiconductor’s advanced PowerTrench =16A D been especially tailored to minimize the on-state resistance. ...

Page 2

... Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. ° 4. Starting 3mH 15A FDS8813NZ Rev. 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25°C ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 75 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDS8813NZ Rev. 25°C unless otherwise noted 3. 3.0V GS µ s 2.0 2.5 3.0 75 100 125 150 ( ) -55 ...

Page 4

... 0.01 0 TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 10V 4. C/W θ AMBIENT TEMPERATURE A Figure 11. Maximum Continuous Drain Current vs Ambient Temperature FDS8813NZ Rev. 25°C unless otherwise noted J 10000 V = 15V DD 1000 V =20V 100 1000 Figure 10. 200 100 10 0.1 0.01 100 125 150 ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.005 - Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDS8813NZ Rev. 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ PULSE WIDTH (sec) ...

Page 6

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS8813NZ Rev. C1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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