FDS8813NZ Fairchild Semiconductor, FDS8813NZ Datasheet - Page 3

• Manufacturer Part Number: FDS8813NZ
• Description: MOSFET N-CH 30V 18.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8813NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4145pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 m Ohms
• Forward Transconductance Gfs (max / Min): 74 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8813NZTR

FDS8813NZ Rev.C1
Typical Characteristics
75
60
45
30
15
1.8
1.6
1.4
1.2
1.0
0.8
0.6
75
60
45
30
15
0
-50
0.0
Figure 3. Normalized On- Resistance
0
Figure 1.
1.5
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
-25
V DS , DRAIN TO SOURCE VOLTAGE (V)
vs Junction Temperature
0.5
T
V
V
J
I
D
2.0
GS
, JUNCTION TEMPERATURE
GS
V
=18.5A
0
GS
On-Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
V
= 10V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
GS
GS
= 10.0V
1.0
= 4.0V
= 4.5V
25
T
2.5
J
= 150
µ
µ
50
1.5
s
s
V
o
C
GS
T
3.0
75
= 3.5V
J
= 25°C unless otherwise noted
2.0
µ
s
T
100
V
J
GS
(
= -55
o
C
3.5
= 3.0V
T
2.5
)
J
125
o
= 25
C
o
C
150
3.0
4.0
3
1E-3
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.01
100
10
0.1
10
9
8
7
6
5
4
3
1
0
2
0.0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
V
GS
V
SD
= 0V
GS
= 3.0V
0.2
, BODY DIODE FORWARD VOLTAGE (V)
T
15
I
D
, GATE TO SOURCE VOLTAGE (V)
J
Normalized On-Resistance
=9.5A
= 150
On-Resistance vs Gate to
4
Source Voltage
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I D , DRAIN CURRENT(A)
Source to Drain Diode
o
0.4
C
30
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
0.6
V
GS
T
T
J
J
= 3.5V
45
= 125
= 25
V
GS
o
0.8
µ
o
C
= 4V
s
C
T
J
V
8
GS
= -55
T
60
J
= 10.0V
V
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= 25
GS
1.0
o
C
= 4.5V
µ
o
s
C
75
10
1.2