FDS8813NZ Fairchild Semiconductor, FDS8813NZ Datasheet - Page 4

• Manufacturer Part Number: FDS8813NZ
• Description: MOSFET N-CH 30V 18.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8813NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4145pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 m Ohms
• Forward Transconductance Gfs (max / Min): 74 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8813NZTR

FDS8813NZ Rev.C1
Typical Characteristics
10
20
15
10
30
10
Figure 11. Maximum Continuous Drain
Figure 7.
1
5
0
0.01
8
6
4
2
0
25
0
Current vs Ambient Temperature
ID = 18.5A
Figure 9.
R
θ
JA
= 50
10
T
0.1
Switching Capability
50
A
Gate Charge Characteristics
o
, AMBIENT TEMPERATURE
t
C/W
AV
Unclamped Inductive
Q
, TIME IN AVALANCHE(ms)
g
V
20
, GATE CHARGE(nC)
V
DD
T
V
GS
J
GS
= 125
75
= 10V
1
= 4.5V
= 10V
o
30
C
V
T
DD
100
10
T
J
J
= 25°C unless otherwise noted
=20V
= 25
40
o
C
V
(
100
125
o
DD
C
)
50
= 15V
1000
150
60
4
Figure 10.
10000
0.01
200
100
1000
0.1
10
10
10
10
10
10
10
10
100
1
0.01
-3
-4
-5
-6
-7
-8
-9
0.1
0
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 12.
V
f = 1MHz
V
Figure 8.
J
A
θ
GS
JA
= MAX RATED
GS
= 25
= 0V
= 125
V
= 0V
Gate Leakage Current vs Gate to
V
5
V
DS
o
GS
DS
C
0.1
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
, DRAIN to SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE(V)
Source Voltage
o
Operating Area
C/W
DS(on)
Capacitance vs Drain
Forward Bias Safe
10
1
T
C oss
T
C
1
C iss
J
J
rss
= 150
15
= 25
o
o
C
C
20
10
10
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25
100
100 ms
1 s
10 s
1 ms
10 ms
DC
µ
100
s
200
50
30