TDA1517ATWDH-T NXP Semiconductors, TDA1517ATWDH-T Datasheet - Page 8

• Manufacturer Part Number: TDA1517ATWDH-T
• Description: Audio Amplifiers W BTL/2X4 W SE AMP
• Manufacturer: NXP Semiconductors

Specifications of TDA1517ATWDH-T

• Product: Class-AB
• Output Power: 8 W
• Available Set Gain: 26 dB
• Thd Plus Noise: 0.03 %
• Operating Supply Voltage: 12 V
• Maximum Power Dissipation: 5000 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Audio Load Resistance: 8 Ohms
• Input Signal Type: Differential
• Minimum Operating Temperature: - 40 C
• Output Signal Type: Differential, Single
• Supply Type: Single
• Supply Voltage (max): 18 V
• Supply Voltage (min): 6 V
• Output Type: 1-Channel Mono or 2-Channel Stereo
• Package / Case: SOT-527
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TDA1517ATW/N1,118

NXP Semiconductors
Test conditions
T
application, f = 1 kHz, R
band-pass: 22 Hz to 22 kHz. In the figures as a function of
frequency a band-pass of 10 Hz to 80 kHz was applied.
The BTL application block diagram is shown in Fig.3. The
PCB layout [which accommodates both the mono (BTL)
and stereo (single-ended) application] is shown in Fig.6.
Printed-Circuit Board (PCB) layout and grounding
For high system performance levels certain grounding
techniques are imperative. The input reference grounds
have to be tied to their respective source grounds and
must have separate traces from the power ground traces;
this will separate the large (output) signal currents from
interfering with the small AC input signals. The small signal
ground traces should be located physically as far as
possible from the power ground traces. Supply and output
traces should be as wide as possible for delivering
maximum output power.
2001 Apr 17
handbook, full pagewidth
amb
8 W BTL or 2 × 4 W SE power amplifier
= 25 °C; unless otherwise specified: V
On
Mute
Standby
CONTROLLER
MICRO-
μc1
0
0
1
L
μc1
μc2
μc2
0
1
0
= 8 Ω, fixed gain = 26 dB, audio
IN1+
IN2−
10 kΩ
V CC
220 nF
220 nF
8.2
kΩ
100
μF
MODE
Fig.4 SE application block diagram.
P
18
17
3
5
= 12 V, BTL
15 kΩ
TDA1517ATW
15 kΩ
MUTE LOGIC
STANDBY/
60 kΩ
60 kΩ
R i
R i
8
reference
voltage
Proper supply bypassing is critical for low noise
performance and high power supply rejection. The
respective capacitor locations should be as close as
possible to the device and grounded to the power ground.
Decoupling the power supply also prevents unwanted
oscillations. For suppressing higher frequency transients
(spikes) on the supply line a capacitor with low ESR
(typical 0.1 μF) has to be placed as close as possible to the
device. For suppressing lower frequency noise and ripple
signals, a large electrolytic capacitor (e.g. 1000 μF or
greater) must be placed close to the IC.
In single-ended (stereo) application a bypass capacitor
connected to pin SVR reduces the noise and ripple on the
midrail voltage. For good THD and noise performance a
low ESR capacitor is recommended.
Input configuration
It should be noted that the DC level of the input pins is
approximately 2.1 V; a coupling capacitor is therefore
necessary.
input
V CC
SGND
15
4
SHORT CIRCUIT
TEMPERATURE
PROTECTION
A
B
10
AND
16
PGND
11
12
13
8
9
100
nF
+OUT
−OUT
MGU305
TDA1517ATW
1000 μF
1000 μF
Product specification
1000
μF
V CC
R L
4 Ω
R L
4 Ω