NDB603AL Fairchild Semiconductor, NDB603AL Datasheet

NDB603AL

Manufacturer Part Number

NDB603AL

Description

MOSFET N-CH 30V 25A D2PAK

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDB603AL.pdf (5 pages)

Specifications of NDB603AL

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

22 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

25A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

40nC @ 10V

Input Capacitance (ciss) @ Vds

1100pF @ 15V

Power - Max

50W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

NDB603ALTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NDB603AL

Manufacturer:

FAIRCHILD

Quantity:

1 600

Company:

Meier Automation Equipment Co., Limited

Part Number:

NDB603AL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

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Absolute Maximum Ratings

Symbol

THERMAL CHARACTERISTICS

DSS

GSS

NDP603AL / NDB603AL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These N-Channel logic level enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance.

particularly suited for low voltage applications such as

DC/DC converters and high efficiency switching circuits

where fast switching, low in-line power loss, and

resistance to transients are needed.

______________________________________________________________________________

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage - Continuous

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

- Continuous

- Pulsed

Derate above 25°C

These devices are

= 25°C

= 25°C unless otherwise noted

Features

NDP603AL

25A, 30V. R

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

High density cell design for extremely low R

175°C maximum junction temperature rating.

DS(ON)

-65 to 175

± 20

62.5

100

275

0.4

2.5

= 0.022

(Note 1)

@ V

NDB603AL

=10V

DS(ON)

January 1996

NDP603AL.SAM

Units

W/°C

°C/W

°C

Related parts for NDB603AL

NDB603AL Summary of contents

Page 1

... NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. ...

Page 2

Electrical Characteristics (T C Symbol Parameter DRAIN-SOURCE AVALANCHE RATINGS W Single Pulse Drain-Source Avalanche DSS Energy I Maximum Drain-Source Avalanche Current AR OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body ...

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NDB603AL Fairchild Semiconductor, NDB603AL Datasheet

NDB603AL

Specifications of NDB603AL

Available stocks

Related parts for NDB603AL

NDB603AL Summary of contents

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Related keywords