NDB603AL Fairchild Semiconductor, NDB603AL Datasheet - Page 5

• Manufacturer Part Number: NDB603AL
• Description: MOSFET N-CH 30V 25A D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of NDB603AL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 15V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDB603ALTR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
Figure 15. Maximum Safe Operating Area
1 5 0
1 0 0
0.05
0.03
0.02
0.01
2 5
2 0
1 5
1 0
0.5
5 0
2 0
1 0
5
0
0.5
0.3
0.2
0.1
5
2
1
0.1
0
1
0.01
Current and Temperature
0.01
0.05
0.02
0.1
SINGLE PULSE
Single Pulse
V
T
C
0.2
GS
= 25°C
D = 0.5
= 20V
1 0
0.5
V
DS
, DRAIN-SOURCE VOLTAGE(V)
I
D
, DRAIN CURRENT (A)
1
0.1
Figure 16. Transient Thermal Response Curve
2
2 0
T = -55°C
J
5
25°C
1 0
(continued)
125°C
3 0
V
DS
= 10V
3 0
1
5 0
4 0
t
1
,TIME (ms)
0.5
0.2
0.1
40
20
10
5
2
1
0.2
Figure 14. Body Diode Forward Voltage
T = 125°C
V
J
GS
0.4
10
= 0V
Variation with Current and Temperature
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
25°C
0.8
P(pk)
-55°C
T - T
R
1
Duty Cycle, D = t /t
J
100
R
JC
t
1
C
JC
(t) = r(t) * R
t
= P * R
1.2
2
= 2.5 °C/W
JC
1.4
1
JC
(t)
2
1.6
NDP603AL.SAM
1 0 0 0