NDB603AL Fairchild Semiconductor, NDB603AL Datasheet - Page 3

• Manufacturer Part Number: NDB603AL
• Description: MOSFET N-CH 30V 25A D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of NDB603AL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 15V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDB603ALTR

Typical Electrical Characteristics
40
30
20
10
80
60
40
20
0
Figure 5.
0
Figure 3. On-Resistance Variation
1.6
1.4
1.2
0.8
0.6
1
0
Figure 1. On-Region Characteristics.
1
-50
V
Voltage and Temperature
with Temperature.
DS
V
-25
I
V
D
GS
GS
= 1 0 V
= 25A
2
1
=10V
=10V
V
V
GS
Drain Current Variation with Gate
0
DS
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
8.0
25
3
2
7.0
50
6.0
T = -55°C
J
75
4
3
.
100
5.0
2 5
4.5
125
5
4
1 2 5
4.0
3.0
150
6
5
175
Figure 6.
0.05
0.04
0.03
0.02
0.01
2.5
1.5
0.5
Figure 4. On-Resistance Variation with Drain
Figure 2. On-Resistance Variation with Gate Voltage
2.5
1.5
0.5
0
3
2
1
2
1
0.5
0
0
V
with Gate Voltage and Temperature
DS
V
Current and Temperature.
and Drain Current.
GS
= 1 0 V
= 10V
V
GS
Sub-threshold Drain Current Variation
V
= 4V
GS
1
2 0
20
, GATE TO SOURCE VOLTAGE (V)
T = 125°C
J
I
D
I , DRAIN CURRENT (A)
D
4.5
, DRAIN CURRENT (A)
1.5
4 0
5.0
40
T = 125°C
J
25°C
25°C
6.0
2
6 0
-55°C
60
7.0
-55°C
8.0
.
1 0
NDP603AL.SAM
2.5
8 0
80