FDMS6673BZ Fairchild Semiconductor, FDMS6673BZ Datasheet - Page 2

• Manufacturer Part Number: FDMS6673BZ
• Description: MOSFET P-CH 30V 15.2A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS6673BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 5915pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0068 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 15.2 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS6673BZTR

©2009 Fairchild Semiconductor Corporation
FDMS6673BZ Rev C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3: The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
BV
GS(th)
SD
iss
oss
rss
g
g
g
gs
gd
rr
the user's board design.
V
Symbol
DSS
T
T
GS(th)
JA
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
a. 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper.
I
I
V
V
V
V
V
V
V
V
I
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
= -15.2 A, di/dt = 100 A/ s
= -250 A, V
= -250 A, referenced to 25 °C
= -250 A, referenced to 25 °C
= -24 V, V
= 0 V, I
= 0 V, I
= ±25 V, V
= -5 V, I
= -15 V, I
= -10 V, R
= 0 V to -10 V
= 0 V to -5 V
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -15 V, V
DS
2
Test Conditions
, I
S
S
D
D
= -2.1 A
= -15.2 A
D
D
D
D
= -15.2 A
GS
= -250 A
GS
GEN
GS
DS
= -15.2 A,
= -15.2 A
= -15.2 A, T
= -11.2 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6
V
I
D
DD
= -15.2 A
= -15 V,
(Note 2)
J
(Note 2)
= 125 °C
JC
is guaranteed by design while R
b. 125 °C/W when mounted on a
Min
-1.0
-30
minimum pad of 2 oz copper.
4444
-1.8
781
695
Typ
0.7
0.8
4.5
5.2
7.8
7.5
33
20
14
28
97
79
93
52
13
26
-18
76
7
1045
5915
1040
1.20
1.25
Max
12.5
-3.0
156
127
130
±10
6.8
9.8
26
45
73
53
32
CA
www.fairchildsemi.com
-1
is determined by
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
ns
pF
V
S
V
V
A
A