FDMS6673BZ Fairchild Semiconductor, FDMS6673BZ Datasheet - Page 2
![MOSFET P-CH 30V 15.2A POWER56](/photos/5/47/54726/fdms6673bz_sml.jpg)
FDMS6673BZ
Manufacturer Part Number
FDMS6673BZ
Description
MOSFET P-CH 30V 15.2A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMS6673BZ.pdf
(7 pages)
Specifications of FDMS6673BZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
5915pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0068 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
15.2 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS6673BZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS6673BZ
Manufacturer:
FAIRCHILD
Quantity:
147
Part Number:
FDMS6673BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ Rev C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3: The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
BV
GS(th)
SD
iss
oss
rss
g
g
g
gs
gd
rr
the user's board design.
V
Symbol
DSS
T
T
GS(th)
JA
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
a. 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper.
I
I
V
V
V
V
V
V
V
V
I
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
= -15.2 A, di/dt = 100 A/ s
= -250 A, V
= -250 A, referenced to 25 °C
= -250 A, referenced to 25 °C
= -24 V, V
= 0 V, I
= 0 V, I
= ±25 V, V
= -5 V, I
= -15 V, I
= -10 V, R
= 0 V to -10 V
= 0 V to -5 V
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -15 V, V
DS
2
Test Conditions
, I
S
S
D
D
= -2.1 A
= -15.2 A
D
D
D
D
= -15.2 A
GS
= -250 A
GS
GEN
GS
DS
= -15.2 A,
= -15.2 A
= -15.2 A, T
= -11.2 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6
V
I
D
DD
= -15.2 A
= -15 V,
(Note 2)
J
(Note 2)
= 125 °C
JC
is guaranteed by design while R
b. 125 °C/W when mounted on a
Min
-1.0
-30
minimum pad of 2 oz copper.
4444
-1.8
781
695
Typ
0.7
0.8
4.5
5.2
7.8
7.5
33
20
14
28
97
79
93
52
13
26
-18
76
7
1045
5915
1040
1.20
1.25
Max
12.5
-3.0
156
127
130
±10
6.8
9.8
26
45
73
53
32
CA
www.fairchildsemi.com
-1
is determined by
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
ns
pF
V
S
V
V
A
A