FDMS6673BZ Fairchild Semiconductor, FDMS6673BZ Datasheet - Page 3

• Manufacturer Part Number: FDMS6673BZ
• Description: MOSFET P-CH 30V 15.2A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS6673BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 5915pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0068 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 15.2 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS6673BZTR

©2009 Fairchild Semiconductor Corporation
FDMS6673BZ Rev C3
Typical Characteristics
120
100
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
Figure 3. Normalized On Resistance
0
Figure 1.
0
-75
Figure 5. Transfer Characteristics
0
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
I
V
V
D
GS
DS
= -15.2 A
-50
vs Junction Temperature
= -10 V
= -5 V
-V
-V
T
1
-25
On Region Characteristics
J
DS
GS
,
1
T
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
V
J
DRAIN TO SOURCE VOLTAGE (V)
GS
= 25
V
GS
0
= -4 V
T
J
V
o
= -6 V
= 150
C
2
GS
25
= -10 V
V
2
o
GS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
C
50
T
= -4.5 V
J
3
= 25 °C unless otherwise noted
T
V
75
J
GS
V
= -55
GS
= -3.5 V
= -3 V
3
o
100 125 150
C )
o
C
4
4
5
3
0.001
0.01
200
100
0.1
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
25
20
15
10
1
0.0
5
0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
V
= 150
= 0 V
-V
0.2
GS
SD
20
= -3 V
, BODY DIODE FORWARD VOLTAGE (V)
o
-V
Normalized On-Resistance
C
On-Resistance vs Gate to
GS
Source Voltage
0.4
4
Source to Drain Diode
,
I
GATE TO SOURCE VOLTAGE (V)
-I
D
D
40
= -15.2 A
V
,
GS
DRAIN CURRENT (A)
0.6
= -3.5 V
60
6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0.8
T
T
T
J
J
J
= 125
= 25
= -55
T
J
80
1.0
= 25
o
o
C
o
C
C
8
o
V
C
V
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GS
V
100
GS
V
1.2
GS
GS
= -4 V
= -4.5 V
= -10 V
= -6 V
1.4
120
10