FDMS6673BZ Fairchild Semiconductor, FDMS6673BZ Datasheet - Page 4
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FDMS6673BZ
Manufacturer Part Number
FDMS6673BZ
Description
MOSFET P-CH 30V 15.2A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMS6673BZ.pdf
(7 pages)
Specifications of FDMS6673BZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
5915pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0068 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
15.2 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS6673BZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS6673BZ
Manufacturer:
FAIRCHILD
Quantity:
147
Part Number:
FDMS6673BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ Rev C3
Typical Characteristics
0.01
200
100
0.1
50
10
10
10
1
0.01
1
0.01
8
6
4
2
0
Figure 7.
0
I
D
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 9.
J
A
= -15.2 A
Figure 11. Forward Bias Safe
JA
= MAX RATED
= 25
= 125
-V
o
20
Switching Capability
C
DS
0.1
0.1
T
Gate Charge Characteristics
t
V
AV
J
, DRAIN to SOURCE VOLTAGE (V)
o
DD
C/W
= 100
Operating Area
, TIME IN AVALANCHE (ms)
Unclamped Inductive
DS(on)
Q
= 15 V
g
, GATE CHARGE (nC)
o
T
C
J
V
40
= 125
DD
1
1
= 10 V
o
C
T
T
60
J
J
V
= 25
= 25 °C unless otherwise noted
DD
10
10
= 20 V
o
C
80
100 us
100 ms
10 ms
1 s
10 s
1 ms
DC
100
100
200
100
200
4
10000
1000
100
300
10
10
10
10
10
10
80
60
40
20
Figure 10.
0
0.1
-4
-5
-6
-7
-8
-9
25
0
f = 1 MHz
V
Limited by Package
R
GS
Figure 8.
V
Current vs Case Temperature
JC
GS
= 0 V
= 1.7
V
= 0 V
Figure 12. Igss vs Vgss
GS
-V
5
50
-V
DS
= 4.5 V
o
Maximum Continuous Drain
GS ,
C/W
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
T
C
J
Capacitance vs Drain
,
GATE TO SOURCE VOLTAGE (V)
= 125
CASE TEMPERATURE (
10
75
1
o
C
15
100
T
J
= 25
20
V
GS
o
o
C
= 10 V
C )
125
10
www.fairchildsemi.com
25
C
C
C
oss
rss
iss
150
30
30