SI4418DY-T1-E3 Vishay, SI4418DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4418DY-T1-E3
• Description: MOSFET N-CH 200V 2.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4418DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 142mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4418DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72513
S09-0322-Rev. D, 02-Mar-09
0.20
0.16
0.12
0.08
0.04
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 3 A
On-Resistance vs. Drain Current
0.2
2
= 100 V
4
V
SD
Q
T
J
g
- Source-to-Drain Voltage (V)
= 150 °C
0.4
- Total Gate Charge (nC)
I
4
D
- Drain Current (A)
Gate Charge
8
0.6
6
V
GS
12
= 6.0 V
0.8
8
V
T
J
GS
= 25 °C
16
= 10 V
1.0
10
20
1.2
12
1600
1400
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
10
GS
= 3 A
= 10 V
C
2
V
V
rss
T
DS
20
GS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
30
Capacitance
4
C
C
50
40
iss
Vishay Siliconix
oss
I
D
6
75
50
= 3 A
Si4418DY
100
www.vishay.com
60
8
125
70
150
10
80
3