SI4418DY-E3 VISHAY [Vishay Siliconix], SI4418DY-E3 Datasheet

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SI4418DY-E3

Manufacturer Part Number
SI4418DY-E3
Description
N-Channel 200-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
200
200
(V)
J
Ordering Information: Si4418DY—E3
ti
t A bi
G
S
S
S
J
J
a
a
0.142 @ V
0.130 @ V
1
2
3
4
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
DS(on)
Si4418DY-T1—E3 (with Tape and Reel)
Top View
a
a
SO-8
GS
GS
N-Channel 200-V (D-S) MOSFET
(W)
= 6.0 V
= 10 V
a
8
7
6
5
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 85_C
= 25_C
= 85_C
D
2.8
3
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
AS
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D Primary Side Switch
G
N-Channel MOSFET
10 secs
Typical
2.1
2.1
2.5
1.3
36
71
15
D
S
3
−55 to 150
"20
200
1.8
12
6
Steady State
Maximum
Vishay Siliconix
1.25
2.3
1.6
1.5
0.8
50
85
20
Si4418DY
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1

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SI4418DY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4418DY—E3 Si4418DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanche Current ...

Page 2

... Si4418DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... Document Number: 72513 S-32412—Rev. B, 24-Nov-03 New Product 1600 1400 1200 1000 0.20 0.16 0.12 0. 25_C J 0.04 0.00 1.0 1.2 Si4418DY Vishay Siliconix Capacitance C iss 800 600 400 C rss C 200 oss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2.5 ...

Page 4

... Si4418DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 −3 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72513 S-32412—Rev. B, 24-Nov-03 New Product −2 − Square Wave Pulse Duration (sec) Si4418DY Vishay Siliconix 1 10 www.vishay.com 5 ...

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