SI4418DY-T1-E3 Vishay, SI4418DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4418DY-T1-E3
• Description: MOSFET N-CH 200V 2.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4418DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 142mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4418DY-T1-E3TR

Si4418DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
- 1.4
- 1.6
0.8
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.001
0.01
100
0.1
10
10
100
1
0.1
-2
* V
125
Limited by R
GS
Limited
I
Single Pulse
D(on)
T
A
> minimum V
= 25 °C
150
V
DS
Square Wave Pulse Duration (s)
1
Safe Operating Area
- Drain-to-Source Voltage (V)
10
DS(on)
-1
GS
*
at which R
BV
10
DSS
Limited
DS(on)
50
40
30
20
10
0
0.01
1
100
is specified
I
DM
Limited
100 µs
1ms
10 ms
100 ms
1 s
10 s
DC
0.1
1000
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Time (s)
T
t
A
1
S09-0322-Rev. D, 02-Mar-09
= P
t
2
Document Number: 72513
DM
10
Z
thJA
thJA
100
t
t
1
2
(t)
= 71 °C/W
100
600
600