IRF740ALPBF Vishay, IRF740ALPBF Datasheet - Page 4

MOSFET N-CH 400V 10A TO-262

IRF740ALPBF

Manufacturer Part Number
IRF740ALPBF
Description
MOSFET N-CH 400V 10A TO-262
Manufacturer
Vishay
Datasheets

Specifications of IRF740ALPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1030pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
10A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF740ALPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF740ALPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF740ALPBF
Quantity:
10 000
Company:
Part Number:
IRF740ALPBF
Quantity:
70 000
Document Number: 91052
100000
10000
1000
100
100
0.1
10
10
1
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
J
V
0.4
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
0.6
Crss
Ciss
Coss
0.8
T = 25 C
J
f = 1 MHZ
100
1.0
°
V
SHORTED
GS
1.2
= 0 V
1000
1.4
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
10
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
10A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
BY R
V
V
V
DS
DS
DS
100
20
DS(on)
= 320V
= 200V
= 80V
FOR TEST CIRCUIT
SEE FIGURE
www.vishay.com
30
10us
100us
1ms
10ms
13
1000
4
40

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