IRFL9014 Vishay, IRFL9014 Datasheet - Page 4

• Manufacturer Part Number: IRFL9014
• Description: MOSFET P-CH 60V 1.8A SOT223
• Manufacturer: Vishay

Specifications of IRFL9014

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL9014

IRFL9014, SiHFL9014
Vishay Siliconix
www.vishay.com
4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91195_06
91195_05
600
500
400
300
200
100
20
16
12
8
4
0
0
10
0
I
D
0
= -6.7 A
- V
Q
DS ,
G
4
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
V
DS
= -30 V
V
C
C
C
GS
iss
rss
oss
8
= 0 V, f = 1 MHz
= C
= C
= C
10
V
gs
gd
ds
DS
1
+ C
+ C
= -48 V
C
C
gd
C
gd
iss
oss
For test circuit
see figure 13
rss
, C
12
ds
Shorted
16
91195_07
91195_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
10
10
10
10
0.1
10
-1
0
2
5
2
5
2
1
5
2
1
0.1
1.0
2
- V
- V
5
2.0
SD
DS
Operation in this area limited
1
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
2
150
T
T
Single Pulse
3.0
C
J
by R
5
= 150 °C
°
= 25 °C
C
10
DS(on)
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
2
4.0
25
5
°
C
10
100
1
10
ms
ms
2
5.0
V
µs
2
GS
= 0 V
5
6.0
10
3