IRFL9014 Vishay, IRFL9014 Datasheet - Page 5

• Manufacturer Part Number: IRFL9014
• Description: MOSFET P-CH 60V 1.8A SOT223
• Manufacturer: Vishay

Specifications of IRFL9014

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL9014

Document Number: 91195
S-81412-Rev. A, 07-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
91195_09
2.0
1.5
1.0
0.5
0.0
91195_11
25
10
10
0.1
10
T
-2
2
1
C
50
10
, Case Temperature (°C)
0.2
0.1
0.01
0 − 0.5
0.05
0.02
-5
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
-4
100
10
125
-3
Single Pulse
(Thermal Response)
150
t
1
, Rectangular Pulse Duration (s)
10
-2
0.1
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
1
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
IRFL9014, SiHFL9014
GS
t
d(on)
V
DS
10
Notes:
1. Duty Factor, D = t
2. Peak T
t
r
D.U.T.
j
= P
P
DM
10
R
Vishay Siliconix
DM
D
2
t
d(off)
x Z
t
1
1
thJC
/t
2
t
f
t
+ T
2
+
-
www.vishay.com
V
C
10
DD
3
5