IRFL9014 Vishay, IRFL9014 Datasheet - Page 6

• Manufacturer Part Number: IRFL9014
• Description: MOSFET P-CH 60V 1.8A SOT223
• Manufacturer: Vishay

Specifications of IRFL9014

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL9014

IRFL9014, SiHFL9014
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91195_12c
400
300
200
100
0
25
V
+
-
DD
V
= - 25 V
Starting T
DD
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
- 0.80 A
- 1.1 A
- 1.8 A
Same type as D.U.T.
Current regulator
I
D
0.2 µF
150
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD