RUE003N02TL Rohm Semiconductor, RUE003N02TL Datasheet
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Manufacturer Part Number
RUE003N02TL
Description
MOSFET N-CH 20V 300MA EMT3
Manufacturer
Rohm Semiconductor
Specifications of RUE003N02TL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 300mA, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
1V @ 1mA
Input Capacitance (ciss) @ Vds
25pF @ 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
8V
Transistor Case Style
EMT
No. Of Pins
3
Svhc
No SVHC
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohm @ 4 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.3 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RUE003N02TLTR
Available stocks
1.8V Drive Nch MOSFET
Structure
Silicon N-channel
MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
4) Drive circuits can be simple.
5) Parallel use is easy.
Applications
Switching
Packaging specifications
Absolute maximum ratings (Ta=25C)
Thermal resistance
Channel to ambient
○
Type
RUE003N02
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
c
www.rohm.com
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
portable equipment.
RUE003N02
2011 ROHM Co., Ltd. All rights reserved.
Package
Code
Basic ordering unit
(pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
3000
TL
Symbol
V
I
P
V
Tstg
DP
Tch
DSS
GSS
I
D
D
∗
∗
Rth(ch-a)
2
1
Symbol
−55 to +150
∗
Limits
±300
±600
150
150
20
±8
Limits
833
Unit
mW
mA
mA
1/3
°C
°C
V
V
°C / W
Unit
Dimensions (Unit : mm)
Equivalent circuit
(1)Source
(2)Gate
(3)Drain
EMT3
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Gate
∗1
Abbreviated symbol : QT
Source
Drain
∗2
2011.05 - Rev.B
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RUE003N02TL Summary of contents
Drive Nch MOSFET RUE003N02 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. ...
RUE003N02 Electrical characteristics (Ta=25C) Symbol Parameter I Gate-source leakage GSS V Drain-source breakdown voltage (BR)DSS I Zero gate voltage drain current DSS Gate threshold voltage V GS(th) Static drain-source on-state ∗ R DS(on) resistance ∗ Forward transfer admittance ...
RUE003N02 1000 Ta =25°C =10V =10Ω Pulsed 100 t d(off d(on 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.7 Switching characteristics Switching characteristics measurement ...
ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...
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